jiangsu changjiang electronics technology co., ltd to-92 l plastic-encapsulate transistors 2SD400 transistor (npn) features low-frequency power amp, electronic governor applications maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 25 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 5 v i c collector current -continuous 1 a p c collector power dissipation 0. 75 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max u nit collector-base breakdown voltage v (br)cbo i c = 10 a, i e =0 25 v collector-emitter breakdown voltage v (br)ceo i c = 1 ma, i b =0 25 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c =0 5 v collector cut-off current i cbo v cb = 20 v, i e =0 1 a emitter cut-off current i ebo v eb = 4 v, i c =0 1 a h fe(1) v ce = 2 v, i c = 50 ma 60 560 dc current gain h fe(2) v ce = 2 v, i c = 1 a 30 collector-emitter saturation voltage v ce(sat) i c = 500 ma, i b = 50 ma 0.3 v base-emitter saturation voltage v be(sat) i c = 500 ma, i b = 50 ma 1.2 v transition frequency f t v ce = 10 v, i c = 50 ma 180 mhz output capacitance c ob v cb = 10 v, f=1mhz 15 pf classification of h fe(1) rank d e f g range 60-120 100-200 160-320 280-560 to-92 l 1. emitter 2. collector 3. base j c ( t www.cj-elec.com 1 a,jun,2014 www.cj-elec.com z c,mar,2016 a,jun,2011
symbol dimensions in millimeters dimensions in inches min. max. min. max. a 3.750 4.050 0.148 0.159 a1 1.280 1.580 0.050 0.062 b 0.380 0.550 0.015 0.022 b1 0.620 0.780 0.024 0.031 c 0.350 0.450 0.014 0.018 d 4.750 5.050 0.187 0.199 d1 4.000 0.157 e 7.850 8.150 0.309 0.321 e 1.270 typ. 0.050 typ. e1 2.440 2.640 0.096 0.104 l 13.800 14.200 0.543 0.559 - 1.600 0.063 0.000 0.300 0.000 0.012 h www.cj-elec.com 2 c,mar,2016
www.cj-elec.com 3 c,mar,2016
|
